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| AGR09070EF Introduction 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 70 W, it is ideally suited for today's wireless base station RF power amplifier applications. R JC 0.80 C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current--Continuous Total Dissipation at TC = 25 C: AGR09070EF Derate Above 25 C: AGR09070EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS -0.5, +15 ID 8.5 PD -- TJ 219 1.25 200 Unit Vdc Vdc Adc W W/C C TSTG -65, +150 C Figure 1. AGR09070EF (flanged) Package Features Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 21 W): -- Modulation spectrum: @ 400 kHz = -60 dBc. @ 600 kHz = -72 dBc. Typical performance over entire GSM band: -- P1dB: 85 W typ. -- Power gain: @ P1dB = 18.25 dB. -- Efficiency @ P1dB = 56% typ. -- Return loss: -12 dB. High-reliability, gold-metalization process. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 70 W minimum output power. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR09070EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics 200 Drain-source Breakdown Voltage (VGS = 0, ID = 300 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 A) Gate Quiescent Voltage (VDS = 26 V, IDQ = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Power Gain (VDS = 26 V, POUT = 70 W, IDQ = 800 mA) Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 800 mA) EDGE Linearity Characterization2 (POUT = 21 W, f = 941 MHz, VDS = 26 V, IDQ = 800 mA) Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 800 mA) Input VSWR Ruggedness (VDS = 26 V, POUT = 70 W, IDQ = 800 mA, VSWR = 10:1, all angles) 1. Across full GSM band, 921 MHz--960 MHz. 2. Measured according to 3GPP GSM 05.05. Symbol V(BR)DSS IGSS IDSS GFS VGS(TH) VGS(Q) VDS(ON) Min 65 -- -- -- -- -- -- Typ -- -- -- 6 -- 3.6 0.12 Max -- 2.6 100 8 -- 4.8 -- -- Unit Vdc Adc Adc S Vdc Vdc Vdc Symbol CRSS COSS Min -- -- Typ 2.3 48 Max -- -- Unit pF pF Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture)1 GL 17 50 18.25 56 -- -- dB % -- -- P1dB VSWRI -- -- 70 -- -60 -72 85 1:6 -- -- -- -- dBc dBc W -- No degradation in output power. AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09070EF Z15 VGG FB1 VDD C16 C17 C18 C19 C20 Z9 Z10 Z11 Z12 Z13 C15 Z14 RF OUTPUT C10 C9 C8 C7 C6 R1 Z8 C11 C12 C13 C14 Z1 RF INPUT C1 Z2 Z3 Z4 Z5 C3 Z6 Z7 2 1 DUT 3 PINS: 1. DRAIN 2. GATE 3. SOURCE C2 C4 C5 A. Schematic Parts List: Microstrip line: Z1 0.431 in. x 0.066 in.; Z2 0.327 in. x 0.066 in.; Z3 0.214 in. x 0.066 in.; Z4 0.285 in. x 0.100 in.; Z5 0.510 in. x 0.530 in.; Z6 0.107 in. x 0.530 in.; Z7 0.058 in. x 0.530 in.; Z8 0.455 in. x 0.530 in.; Z9 0.132 in. x 0.530 in.; Z10 0.070 in. x 0.530 in.; Z11 0.535 in. x 0.100 in.; Z12 0.181 in. x 0.100 in.; Z13 0.245 in. x 0.066 in.; Z14 0.315 in. x 0.066 in.; Z15 1.700 in. x 0.050 in. ATC (R) chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.2 pF 100B1R2JW500X; C4, C5, C11, C12: 12 pF 100B120JW500X; C7, 22 pF 100B220JW500X; C13, 2.7 pF 100B2R7BW500X; C17, 10 pF 100B100JW500X. Sprague (R) tantalum surface-mount chip capacitor: C10, C20 10 F, 35 V. Kemet(R) 1206 size chip capacitor: C9, C19: 0.1 F C1206104K5RAC7800. Murata (R) 0805 size chip capacitor: C8, C18: 0.01 F GRM40X7R103K100AL. Johanson Giga-Trim(R) variable capacitor: C3, C14: 0.8 pF to 8.0 pF 27271SL. 1206 size chip resistor: R1 51 . Fair-Rite (R) ferrite bead: FB1 2743019447. Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR09070EF Test Circuit AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Data Sheet November 2003 Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170 U CT IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 LOA D < 0.2 0.49 OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16 0.1 0.4 0.48 ) / Yo (-jB CE 0.6 -85 AN PT CE US ES 1. 0 0.2 6 0.4 4 0.0 0 -15 -80 IV CT IN DU 0.3 ,O o) 5 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f) 921 (f1) 940 960 (f3) ZS (Complex Source Impedance) 0.530 - j1.527 0.547 - j1.394 0.508 - j1.240 GATE (2) ZS ZL (Complex Optimum Load Impedance) 1.774 + j0.257 1.640 + j0.275 1.457 + j0.351 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances Agere Systems Inc. F 0. 32 0. 1.8 18 0 -5 -25 4 4 0. 5 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 -3 -70 5 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC I TI 0.1 0.4 -110 VE RE AC TA N 0.0 0 9 .41 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 0.4 40 4 Z X/ -20 5 0.0 3. 0 Z0 = 4 -75 0.6 ZS R -15 4.0 0.8 f3 f1 -10 0. 8 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) ZL 5.0 10 20 50 20 10 5.0 1. 0 0.2 f3 f1 0. 8 0.6 0.4 10 0.1 -1 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES 20 L E OF ANG 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 -30 0.3 0.2 -4 0 0. 19 0. 31 0. 07 30 0. 43 AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20.0 AGR09070EF; VDD = 26 V; FREQUENCY = 940.5 MHz TYPICAL DATA 19.5 IDQ = 1000 mA IDQ = 1100 mA POWER GAIN (dB)Z 19.0 18.5 18.0 IDQ = 900 mA IDQ = 800 mA IDQ = 700 mA 17.5 17.0 0 5 10 15 20 25 30 35 40 45 50 55 60 POUT (W)Z 65 70 75 80 85 90 95 100 105 Figure 4. Power Gain vs. POUT AGR09070EF; FREQUENCY = 940.5 MHz VDD = 26 V; IDQ = 800 mA TYPICAL DATA -30 -40 MODULATION SPECTRUM (dBc)Z -50 EDGE FORMAT: 3GPP GSM 05.05 RES BW: 30 kHz VIDEO BW: 300 Hz 400 kHz -60 -70 -80 600 kHz -90 -100 30 31 32 33 34 35 36 37 38 39 POUT (dBm)Z 40 41 42 43 44 45 Figure 5. Modulation Spectrum vs. POUT AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 65 60 55 50 45 EFFICIENCY (%)Z 40 35 30 25 20 15 10 5 0 10 20 30 40 50 60 POUT (W)Z 70 80 90 100 110 IDQ = 1100 mA IDQ = 800 mA AGR09070EF; VDD = 26 V; FREQUENCY = 940.5 MHz TYPICAL DATA Figure 6. Efficiency vs. POUT TYPICAL DATA 400 kHz -58 -59 -60 -61 MODULATION SPECTRUM (dBc)Z -62 -63 -64 -65 -66 -67 -68 -69 -70 -71 -72 -73 -74 -75 AGR09070EF; EDGE Format VDD = 26 V; IDQ = 800 mA; POUT = 21 W 42 40 38 36 32 GAIN (dB) AND EFFICIENCY (%)Z 34 EFFICIENCY 30 28 26 GAIN 24 22 20 18 16 14 12 600 kHz 10 8 6 960 -76 921 926 931 936 941 945 FREQUENCY (MHz)Z 950 955 Figure 7. Modulation Spectrum, Gain, and Efficiency vs. Frequency AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 19.5 19.0 18.5 18.0 POWER GAIN (dB)Z 17.5 17.0 16.5 16.0 RETURN LOSS 15.5 15.0 14.5 921 926 931 936 941 945 FREQUENCY (MHz) 950 955 -35.0 -40.0 -45.0 960 PG @ POUT = 95 W PG @ POUT = 41 W AGR09070EF; VDD = 26 V TYPICAL DATA 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 RETURN LOSS (dB)Z Figure 8. Power Gain and Return Loss vs. Frequency AGR09070EF; VDD = 26 V TYPICAL DATA 120 110 100 90 80 POUT (W)Z 70 60 50 40 30 20 10 95 90 POUT @ 921 MHz POUT @ 960 MHz POUT @ 940.5 MHz EFFICIENCY @ 921 MHz 85 80 EFFICIENCY (%)Z 75 70 65 60 EFFICIENCY @ 960 MHz 55 50 45 40 35 3.00 EFFICIENCY @ 940.5 MHz 0 0.50 1.00 1.50 PIN (W) 2.00 2.50 Figure 9. Power Out and Efficiency vs. Input Power AGR09070EF 70 W, 921 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR09070EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR09070EF XXXX 1 3 3 2 2 XXXX - 4 Digit Trace Code |
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